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  LH1526Ab/ aac/ aactr document number 83825 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 1 i179034 8765 123 4 s2' s2 s1 s1' s2' s2 s1 s1' dip smd pb p b -free e3 dual 1 form a solid-state relays features ? dual channel 1 form a  extremely low operating current  high-speed operation  isolation test voltage 5300 v rms  current-limit protection  high surge capability  dc-only option  clean, bounce-free switching  low power consumption  high-reliability monolithic receptor  surface-mountable  lead-free component  component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals  ul1577, file no. e52744 system code h or j, double protection  csa - certification 093751  bsi/babt cert. no. 7980 applications general telecom switching - telephone line interface - on/off hook - ring relay - break switch - ground start battery-powered switch applications industrial controls -microprocessor control of solenoids, lights, motors, heaters, etc. programmable controllers instrumentation see "solid state relays" ( application note 56) description the lh1526 relay is two spst normally open switches that can replace electromechanical relays in many applications. the relays require a minimal amount of led drive current to operate, making it ideal for battery powered and power consumption sensitive applications. the relay is constructed using a gaaias led for actuation control and an integrated monolithic die for the switch output. the die is, fabri- cated in a high-voltage dielectrically isolated technol- ogy, comprised of a photodiode array, switch-control circuitry, and mosfet switches. in addition, the relay employs current-limiting circuitry, enabling it to pass fcc 68.302 and other regulatory surge requirements when overvoltage protection is provided. the relay can be configured for ac/dc or dc-only operation. order information part remarks LH1526Aac tubes, smd-8 LH1526Aactr tape and reel, smd-8 LH1526Ab tubes, dip-8
www.vishay.com 2 document number 83825 rev. 1.4, 26-oct-04 LH1526Ab/ aac/ aactr vishay semiconductors absolute maximum ratings, t amb = 25 c stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum ratings for extended periods of time can adversely affect reliability. ssr electrical char acteristics, t amb = 25 c minimum and maximum values are testing require ments. typical values are c haracteristics of the device and are the result of eng ineering evaluations. typical values are for information only and are not part of the testing requirements. input output parameter test condition symbol value unit led input ratings: continuous forward current i f 50 ma led input ratings: reverse voltage v r 8.0 v output operation: dc or peak ac load voltage i l 50 av l 400 v continuous dc load current , unidirectional operation pins 4, 6 (+) to pin 5 (-) i l 250 ma continuous dc load current , two pole operation i l 100 ma ambient operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 150 c pin soldering temperature t = 10 s max t sld 260 c input/output isolation test voltage t = 1.0 s, i iso = 10 a max v iso 5300 v rms power dissipation p diss 600 mw parameter test condition symbol min ty p. max unit led forward current, switch turn-on i l = 70 ma, t = 10 ms i fon 0.3 0.5 ma led forward current, switch turn-off v l = 350 v, t = 100 ms i foff 0.001 0.1 ma led forward voltage i f = 1.5 ma v f 0.80 1.15 1.40 v parameter test condition symbol min ty p. max unit on-resistance: ac/dc, each pole i f = 1.5 ma, i l = 50 ma r on 17 25 36 ? off-resistance i f = 0 ma, v l = 100 v r off 5000 g ? current limit i f = 1.5 ma, t = 5.0 ms, v l = 7.0 v i lmt 170 210 270 ma off-state leakage current i f = 0 ma, v l = 100 v i o 0.04 200 na i f = 0 ma, v l = 400 v i o 1.0 a output capacitance i f = 0 ma, v l = 1.0 v c o 37 pf i f = 0 ma, v l = 50 v c o 13 pf switch offset i f = 5.0 ma v os 0.25 v
LH1526Ab/ aac/ aactr document number 83825 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 3 transfer typical characteris tics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit capacitance (input-output) v iso = 1.0 v c io 0.8 pf turn-on time i f = 1.5 ma, i l = 50 ma t on 1.00 ms i f = 5.0 ma, i l = 50 ma t on 0.5 1.0 ms turn-off time i f = 1.5 ma, i l = 50 ma t off 0.20 ms i f = 5.0 ma, i l = 50 ma t off 0.4 0.9 ms figure 1. recommended operating conditions figure 2. led voltage vs. temperature 0 20 40 60 80 100 120 C40 C20 0 20 40 60 80 ambient temperature ( c) 17333 i fon = 5 to10 ma load current ( ma ) i fon =1ma i fon =2ma i fon = 0.5 ma i fon = 0.3 ma iLH1526Ab_01 ambient temperature, t a (c) led forwad voltage (v) -40 -20 0 20 40 60 80 1.6 1.5 1.4 1.3 1.2 1.1 1.0 i f =20ma i f =1ma i f =2ma i f =5ma i f =10ma i f =50ma fi 3.ledctsitcht-s.tmpat fi 4.on-rsistacs.tmpat C100 100 300 500 700 900 1100 1300 C40 C20 0 20 40 60 80 ambient temperature ( c) 17332 i l =100ma turnCon (%), norm. to 25 c led forward current for switch iLH1526Ab_03 50 40 30 20 10 0 -10 -20 -30 -40 -40 -20 0 20 40 60 80 ambient temperature, t a (c) change in on-resistance (%) normalzed to 25 c i l =50ma
www.vishay.com 4 document number 83825 rev. 1.4, 26-oct-04 LH1526Ab/ aac/ aactr vishay semiconductors figure 5. led dropout voltage vs. temperature figure 6. current limit vs. temperature figure 7. variation in on-r esistance vs. led current iLH1526Ab_04 1.20 1.10 1.00 0.90 0.80 0.70 -40-20 020406080 ambient temperature, t a (c) led forward voltage (v) iLH1526Ab_05 40 30 20 10 0 -10 -20 -30 -40 change in current limit (%) normalized to 25 c -40 -20 0 20 40 60 80 ambient temperature, t a (c) i f =5ma,t=5ms iLH1526Ab_06 9 8 7 6 5 4 3 2 1 0 0.0 1.0 2.0 3.0 4.0 5.0 led forward current (ma) ac/dc on-resistance variation (%) normalized to data sheet r on specification @ i f =5ma fi 8.sitchcapacitacs.applidvlta fi 9.otptislati fi 10.laacts. applidvltaatelatd tmpats iLH1526Ab_07 capacitnce (pf) 020406080100 applied voltage (v) 70 60 50 40 30 20 10 0 iLH1526Ab_08 frequency (hz) isolation (db) 100 80 60 40 20 0 10 2 10 3 10 4 10 5 10 6 10 7 v p =10v r l =50 ? iLH1526Ab_09 load voltage (v) off-state leakage current (na) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 50 100 150 200 250 300 350 400 70 c 85 c 50 c
LH1526Ab/ aac/ aactr document number 83825 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 5 figure 11. insertion loss vs. frequency figure 12. leakage current vs. applied voltage figure 13. switch breakdown voltage vs. temperature iLH1526Ab_10 frequency (hz) insertion loss (db) 0.6 0.5 0.4 0.3 0 .2 0.1 0.0 10 2 10 3 10 4 10 5 rl = 600 ? iLH1526Ab_11 load voltage (v) off-state leakage current (pa) 0 50 100 150 200 250 300 350 400 100 90 80 70 60 50 40 30 20 10 0 i f =0ma iLH1526Ab_12 ambient temperature, t a (c) change in breakdown voltage (%) normalized to 25 c 8 6 4 2 0 -2 -4 -6 -8 -40 -20 0 20 40 60 80 fi 14.ihosvlas.tma fi 15.t-tims.tma fi 16.t-tims.ledc iLH1526Ab_13 5 4 3 2 1 0 20 30 40 50 60 70 80 90 ambient temperature, t a (c) ( a) i f =5ma iLH1526Ab_14 ambient temperature, t a (c) (ma) change in turn-0n time (%) normalizd to 25 c -40 -20 0 20 40 60 80 60 50 40 30 20 10 0 -10 -20 -30 -40 i f =5ma i l =50ma iLH1526Ab_15 led forward current (ma) turn-on time (ms) 0 4 8 121620 3.0 2.4 1.8 1.2 0.6 0.0 85 c 25 c -40 c
www.vishay.com 6 document number 83825 rev. 1.4, 26-oct-04 LH1526Ab/ aac/ aactr vishay semiconductors package dimensions in inches (mm) figure 17. turn-off time vs. temperature iLH1526Ab_17 15 10 5 0 -5 -10 -15 -40 -20 0 20 40 60 80 ambient temperature, t a (c) change in turn-off time (%) normalized to 25 c i f =5ma i l =50ma fi 18.t-tims.ledc iLH1526Ab_18 led forward current (ma) turn-off time (ms) 0 4 8 121620 3.0 2.4 1.8 1.2 0.6 0.0 85 c 25 c -40 c i178008 pin one id .268 (6.81) .255 (6.48) .390 (9.91) .379 (9.63) .045 (1.14) .030 (0.76) 4 typ. .100 (2.54) typ. 10 3 C9 .300 (7.62) typ. .022 (.56) .018 (.46) .012 (.30) .008 (.20) .130 (3.30) .110 (2.79) .150 (3.81) .130 (3.30) .035 (.89) .020 (.51) .250 (6.35) .230 (5.84) 4 3 2 1 .031 (0.79) .050 (1.27) 5 6 78 dip iso method a
LH1526Ab/ aac/ aactr document number 83825 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 7 package dimensions in inches (mm) i178009 pin one i.d . .390 (9.91) .379 (9.63) .045 (1.14) .030 (0.78) .040 (1.02) .020 (.51) 4 typ. .008 (.25) .004 (.10) .150 (3.81) .130 (3.30) .100 (2.54) typ. .050 (1.27) typ. .312 (7.80) .298 (7.52) .315 (8.00) typ. .395 (10.03) .375 (9.52) .031 (.79) typ. .268 (6.81) .255 (6.48) radius .010 (2.54) typ. 10? 3 to 7? smd iso method a .100 (2.54) r .010 (.25) .070 (1.78) .030 (.76) .060 (1.52) .315 (8.00) min .435 (11.05)
www.vishay.com 8 document number 83825 rev. 1.4, 26-oct-04 LH1526Ab/ aac/ aactr vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423


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